p p j a 3415 a july 7 ,201 5 - rev00 page 1 2 0 v p - c hannel enhancement mode mosfet voltage - 2 0 v current - 4.5 a sot - 23 unit : inch(mm) f eatures ? r ds(on) , v gs @ - 4.5 v , i d @ - 4.5 a< 4 6 m ? ? r ds(on) , v gs @ - 2 .5 v , i d @ - 3.0 a< 56 m ? ? r ds( on) , v gs @ - 1.8 v , i d @ - 1.5 a< 88 m ? ? advanced trench process technology ? specially designed for switch load, pwm application, etc ? lead free in compliance wit h eu rohs 2011/65/eu directive . ? green molding compound as per iec61249 std. (halogen free) mechanical data ? case: sot - 23 package ? terminals: solderable per mil - std - 750, method 2026 ? approx. weight: 0.0003 ounces, 0.0084 grams ? marking: a 5 a parameter symbol limit units drain - source voltage v ds - 20 v gate - source voltage v gs + 12 v continuous drain curr ent i d - 4. 5 a pulsed drain current i dm - 1 8 a power dissipation t a =25 o c p d 1. 25 w derate above 25 o c 1 0 m w/ o c operatin g junction an d storage temperature range t j ,t stg - 55~150 o c typical thermal resistance - j unction to ambient (note 3 ) r ja 10 0 o c /w maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted)
p p j a 3415 a july 7 ,201 5 - rev00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage b v dss v gs = 0 v, i d = - 25 0ua - 2 0 - - v gate threshold voltage v gs(th) v ds =v gs , i d = - 250 ua - 0. 5 - 0. 74 - 1. 3 v drain - source on - state resistance r ds(on) v gs = - 4.5 v, i d = - 4.5 a - 38 4 6 m gs = - 2.5 v, i d = - 3.0 a - 47 56 v gs = - 1.8 v, i d = - 1.5 a - 68 88 zero gate voltag e drain current i dss v ds = - 16 v, v gs =0v - - 0.01 - 1 u a gate - source leakage current i gss v gs = + 12 v, v ds =0v - + 10 + 10 0 n a dynamic total gate charge q g v ds = - 10 v, i d = - 4.5 a, v gs = - 4.5v (note 1 , 2 ) - 1 0 - nc gate - source charge q gs - 1.7 - gate - drain charge q gd - 2.4 - input capacitance ciss v ds = - 10 v, v gs = 0 v, f=1.0mhz - 980 - pf output capacitance coss - 100 - reverse transfer capacitance crss - 81 - switching turn - on delay time t d (on) v dd = - 10 v, i d = - 4.5 a, v g s = - 4.5v, r g = 6 (note 1 , 2 ) - 9.8 - ns turn - on rise time tr - 54 - turn - o ff delay time t d (off) - 44 - turn - o ff fall time tf - 31 - drain - source diode maximum continuous drain - source diode forward current i s --- - - - 1. 5 a diode forward voltage v sd i s = - 1.0 a, v gs = 0 v - - 0.7 8 - 1.2 v notes : 1. pulse width < 300us, duty cycle < 2% 2. essentially independent of operating temperature typical characteristics . 3. r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is de fined as the solder mounting surface of the drain pins m ounted on a 1 inch fr - 4 with 2oz . square pad of copper 4. the maximum current rating is package limited
p p j a 3415 a july 7 ,201 5 - rev00 page 3 t ypical characteristic curves fig.1 on - region characteristics fig. 2 transfer charac teristics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. junction temperature fig. 5 on - resistance variation with vgs. fig. 6 body d i ode characteristics
p p j a 3415 a july 7 ,201 5 - rev00 page 4 t ypical characteristic curves fig. 7 gate - charge characteri stics fig. 8 threshold voltage variation with temperature . fig. 9 capacitance vs. drain - source voltage.
p p j a 3415 a july 7 ,201 5 - rev00 page 5 part no packing code version mounting pad layout part n o packing code package type packing type marking ver sion pja3415 a _r1_00001 sot - 23 3k pcs / 7
p p j a 3415 a july 7 ,201 5 - rev00 page 6 disclaimer
|
